SUP/SUB75N03-07
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.007 @ V
GS
= 10 V
0.01 @ V
GS
= 4.5 V
I
D
(A)
75
a
70
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75N03-07
SUB75N03-07
N-Channel MOSFET
D S
Top View
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
75
a
64
Unit
V
A
240
75
280
120
c
鈥?5 to 175
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 70794
S-000652鈥擱ev. D, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
R
thJC
R
thJA
62.5
1.25
Symbol
Limit
40
Unit
_C/W
2-1