SUP/SUB65P04-15
New Product
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
鈥?0
0.023 @ V
GS
= 鈥?.5 V
鈥?0
r
DS(on)
(W)
0.015 @ V
GS
= 鈥?0 V
I
D
(A)
鈥?5
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP65P04-15
SUB65P04-15
P-Channel MOSFET
D S
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
b
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
鈥?0
"20
鈥?5
鈥?7
Unit
V
A
鈥?40
鈥?0
180
120
c
W
3.75
鈥?5 to 175
_C
mJ
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
b
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. When mounted on 1鈥?square PCB (FR-4 material).
c. See SOA curve for voltage derating.
Document Number: 71174
S-00831鈥擱ev. A, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
R
thJC
62.5
1.25
Symbol
R
thJA
Limit
40
Unit
_C/W
2-1