SUP60N10-16L
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
100
FEATURES
r
DS(on)
(W)
I
D
(A)
60
56
0.016 @ V
GS
= 10 V
0.018 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized
APPLICATIONS
D
DC/DC Primary Side Switch
TO-220AB
D
G
DRAIN connected to TAB
G D S
Top View
SUP60N10-16L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Maximum Power
Dissipation
a
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
100
"20
60
35
100
40
80
150
b
- 55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Free Air)
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1鈥?square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
62.5
1.0
Unit
_C/W
Document Number: 71928
S-03600鈥擱ev. B, 31-Mar-03
www.vishay.com
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