SUP/SUB40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.025 @ V
GS
= 4.5 V
I
D
(A)
40
40
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP40N06-25L
SUB40N06-25L
S
N-Channel MOSFET
D S
Top View
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
60
"20
40
25
100
40
80
90
c
3.7
鈥?5 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70288
S-57253鈥擱ev. C, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
R
thJC
Symbol
Limit
40
80
1.6
Unit
_C/W
2-1