SUP28N15-52
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
FEATURES
I
D
(A)
28
26
r
DS(on)
(W)
0.052 @ V
GS
= 10 V
0.060 @ V
GS
= 6 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized
APPLICATIONS
D
Primary Side Switch
D
TO-220AB
G
DRAIN connected to TAB
G D S
Top View
S
N-Channel MOSFET
SUP28N15-52
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
L = 0.1 mH
T
C
= 25_C
Maximum Power Dissipation
T
A
= 25_C
(mounted)
a
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 125_C
I
D
I
DM
I
S
I
AR
E
AR
Symbol
V
DS
V
GS
Limit
150
"20
28
16
50
28
25
31
120
b
3.75a
-55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
a
Junction-to-Ambient
a
Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1鈥?x1鈥?FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71939
S-21375鈥擱ev. A, 12-Aug-02
www.vishay.com
Free Air
R
thJA
R
thJC
Symbol
Typical
40
62.5
1.25
Unit
_C/W
C/W
1