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SUP/SUB15P01-52

Vishay Siliconix

P-Channel 8-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V

DS

(V)

r

DS(on)

(W)

0.052 @ V

GS

= 鈥?.5 V

鈥?

0.070 @ V

GS

= 鈥?.5 V

0.105 @ V

GS

= 鈥?.8 V

I

D

(A)

鈥?5

鈥?0

鈥?0.5

TO-220AB

S

TO-263

G

DRAIN connected to TAB

G

G D S

Top View

SUP15P01-52

SUB15P01-52

P-Channel MOSFET

D S

Top View

D

ABSOLUTE MAXIMUM RATINGS (T

A

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

(T

J

= 175_C)

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

b

Power Dissipation

L = 0.1 mH

T

C

= 25_C (TO-220AB and TO-263)

T

A

= 25_C (TO-263)

c

T

C

= 25_C

T

C

= 125_C

Symbol

V

DS

V

GS

I

D

I

DM

I

AR

E

AR

P

D

T

J

, T

stg

Limit

鈥?

"8

鈥?5

鈥?.7

鈥?5

鈥?0

5

25

d

2.1

鈥?5 to 175

Unit

V

A

mJ

W

_C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient

Junction-to-Case

Junction-to-Lead

Notes:

a. Package limited.

b. Duty cycle

v

1%.

c. When mounted on 1鈥?square PCB (FR-4 material).

d. See SOA curve for voltage derating.

Document Number: 71085

S-20966鈥擱ev. C, 01-Jul-02

www.vishay.com

PCB Mount (TO-263)

c

Symbol

R

thJA

R

thJC

R

thJL

Typical

58

5

16

Maximum

70

6

20

Unit

_C/W

C/W

1

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  P-Channel 8-V (D-S), 175C MOSFET
  
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  P-Channel 8-V (D-S), 175C MOSFET
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