SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.052 @ V
GS
= 鈥?.5 V
鈥?
0.070 @ V
GS
= 鈥?.5 V
0.105 @ V
GS
= 鈥?.8 V
I
D
(A)
鈥?5
鈥?0
鈥?0.5
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP15P01-52
SUB15P01-52
P-Channel MOSFET
D S
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
鈥?
"8
鈥?5
鈥?.7
鈥?5
鈥?0
5
25
d
2.1
鈥?5 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Junction-to-Lead
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. When mounted on 1鈥?square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Document Number: 71085
S-20966鈥擱ev. C, 01-Jul-02
www.vishay.com
PCB Mount (TO-263)
c
Symbol
R
thJA
R
thJC
R
thJL
Typical
58
5
16
Maximum
70
6
20
Unit
_C/W
C/W
1