SUM70N06-11
New Product
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.011
I
D
(A)
70
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
New Low Thermal Resistance Package
APPLICATIONS
D
Automotive and Industrial
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
SUM70N06-11
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
T
C
= 25_C
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
P
D
T
J
, T
stg
T
C
= 100_C
I
D
I
DM
I
AR
E
AR
Symbol
V
GS
Limit
"20
70
49
160
35
61
120
b
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient鈥擯CB Mount
c
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1鈥?square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72008
S-03592鈥擱ev. B, 31-Mar-03
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
1.25
Unit
_C/W
1