SUM40N03-30L
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
FEATURES
I
D
(A)
40
33
r
DS(on)
(W)
0.030 @ V
GS
= 10 V
0.045 @ V
GS
= 4.5 V
Q
g
(Typ)
18
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
100% R
g
Tested
TO-263
D
DRAIN connected to TAB
G
D S
G
Top View
Ordering Information: SUM40N03-30L鈥擡3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Single Pulse Avalanche Current
Repetitive Avalanche
Energy
a
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
"20
40
36
40
30
31.25
100
b
3.75
鈭?5
to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1鈥?square PCB (FR-4 material).
PCB Mount
c
Symbol
R
thJA
R
thJC
Limit
40
1.5
Unit
_C/W
Document Number: 73245
S-50140鈥擱ev. A, 24-Jan-05
www.vishay.com
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