SUM27N20-78
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
200
r
DS(on)
(W)
0.078 @ V
GS
= 10 V
0.083 @ V
GS
= 6 V
I
D
(A)
27
26
D
D
D
D
TrenchFETr Power MOSFETS
175_C Junction Temperature
New Low Thermal Resistance Package
PWM Optimized for Fast Switching
APPLICATIONS
D
Isolated DC/DC converters
- Primary-Side Switch
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
SUM27N20-78
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
200
"20
27
15.5
60
18
16.2
150
b
3.75
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 72108
S-03005鈥擱ev. A, 27-Jan-03
www.vishay.com
PCB Mount (TO-263)
c
Symbol
R
thJA
R
thJC
Limit
40
1.0
Unit
_C/W
_
1