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SUM110P06-08L Datasheet

  • SUM110P06-08L

  • P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET

  • 57.25KB

  • 5頁(yè)

  • VISHAY   VISHAY

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SUM110P06-08L
New Product
Vishay Siliconix
P-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
鈭?0
FEATURES
I
D
(A)
d
D
TrenchFETr Power MOSFET
D
New Package with Low Thermal Resistance
D
100% R
g
Tested
r
DS(on)
(W)
0.008 @ V
GS
=
鈭?0
V
0.0105 @ V
GS
=
鈭?.5
V
鈭?10
鈭?10
APPLICATIONS
D
Automotive Such As
鈭?/div>
High-Side Switch
鈭?/div>
Motor Drives
鈭?/div>
12-V Boardnet
S
TO-263
G
G
D S
Top View
D
Ordering Information: SUM110P06-08L
SUM110P06-08L鈥擡3 (Lead (Pb)-Free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
d
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
b
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
鈭?0
"20
鈭?10
鈭?5
鈭?00
鈭?5
211
272
c
3.75
b
鈭?5
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient PCB Mount
b
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. When mounted on 1鈥?square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
Document Number: 73045
S-41506鈥擱ev. A, 09-Aug-04
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
0.55
Unit
_C/W
1

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