SUM110N08-07
New Product
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
75
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance Package
r
DS(on)
(W)
I
D
(A)
110
APPLICATIONS
D
Automotive
- Boardnet 42-V EPS and ABS
- Motor Drives
D
High Current
D
DC/DC Converters
0.007 @ V
GS
= 10 V
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
SUM110N08-07
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
a
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
75
"20
110
63
350
75
280
200
b
3.7
-55 to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 71829
S-21863鈥擱ev. C, 21-Oct-02
www.vishay.com
PCB Mount
c
Symbol
R
thJA
R
thJC
Limit
40
0.75
Unit
_C/W
_
1