SUM110N04-04
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
FEATURES
r
DS(on)
(W)
I
D
(A)
110
a
D
TrenchFETr Power MOSFETS: 1.8-V Rated
D
175_C Junction Temperature
0.0035 @ V
GS
= 10 V
APPLICATIONS
D
Automotive
- ABS
- 12-V EPS
- Motor Drivers
D
TO-263
G
G
D S
Top View
SUM110N04-04
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
b
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
20
110
a
107
a
350
60
180
250
c
3.75
-55 to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 72077
S-22450鈥擱ev. B, 20-Jan-03
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
0.6
Unit
_C/W
_
1