SUM110N02-03P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
20
FEATURES
r
DS(on)
(W)
I
D
(A)
a
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
Optimized for Low-Side Synchronous
Rectifier
0.0032 @ V
GS
= 10 V
0.0052 @ V
GS
= 4.5 V
110
a
110
a
APPLICATIONS
D
Synchronous Buck DC/DC Conversion
- Desktop
- Server
D
Load Switch
D
TO-263
G
DRAIN connected to TAB
G
D S
S
N-Channel MOSFET
Top View
SUM110N02-03P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
Limit
20
"20
110
a
102
300
120
c
3.75
-55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
40
1.25
Unit
_C/W
_
Document Number: 72096
S-22451鈥擱ev. A, 20-Jan-03
www.vishay.com
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