SUD70N02-05P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.005 @ V
GS
= 10 V
0.0083 @ V
GS
= 4.5 V
I
D
(A)
a
30
23
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized for High Efficiency
APPLICATIONS
D
Synchronous Buck DC/DC Conversion
- Desktop
- Server
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD70N02-05P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
T
A
= 25_C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
P
D
T
J
, T
stg
T
A
= 25_C
T
C
= 25_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
20
"20
30
a
70
b
100
30
7.5
a
65
-55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
Document Number: 71930
S-21665鈥擱ev. A, 30-Sep-02
www.vishay.com
t
v
10 sec
Steady State
R
thJA
R
thJC
Symbol
Typical
16
40
1.9
Maximum
20
50
2.3
Unit
_C/W
C/W
1