SUD50P06-15L
New Product
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 60
FEATURES
I
D
(A)
- 50
d
- 50
r
DS(on)
(W)
0.015 @ V
GS
= - 10 V
0.020 @ V
GS
= - 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
APPLICATIONS
D
Automtoive 12-V Boardnet
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
D
Ordering Information: SUD50P06-15L
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
- 60
"20
- 50
d
- 39
- 80
- 50
125
136
c
3
b, c
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Junction-to-Ambient
b
J
ti t A bi t
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. When mounted on 1鈥?square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
Document Number: 72250
S-31673鈥擱ev. B 11-Aug-03
www.vishay.com
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
0.82
Maximum
18
50
1.1
Unit
_C/W
C/W
1