鈭?/div>
12-V Boardnet
TO-252
S
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
Order Number:
SUD50P04-13L鈥擡3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
b
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
T
C
= 25_C
T
A
= 25_C
P
D
T
J
, T
stg
Limit
鈭?0
"20
鈭?0
c
鈭?3
鈭?00
鈭?0
c
鈭?0
80
93.7
b
3
a
鈭?5
to 175
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power
Dissipation
b
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
t
v
10 sec.
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1鈥?x 1鈥?FR4 Board.
b. See SOA curve for voltage derating.
c. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 73009
S-41267鈥擱ev. A, 05-Jul-04
www.vishay.com
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