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SUD50N06-16 Datasheet

  • SUD50N06-16

  • N-Channel 60-V (D-S) 175 Degreee Celcious MOSFET

  • 70.61KB

  • 5頁

  • VISHAY   VISHAY

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SUD50N06-16
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
FEATURES
D
TrenchFETr Power MOSFET
I
D
(A)
c
50
r
DS(on)
(W)
0.016 @ V
GS
= 10 V
APPLICATIONS
D
Automotive
- ABS
- EPS
- Motor Drives
D
Industrial
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD50N06-16
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
60
"20
50
c
28
100
50
c
35
61
88
b
3a
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
Junction-to-Case
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
20
40
1.4
Maximum
25
50
1.7
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1鈥?x1鈥?FR4 Board.
b. See SOA curve for voltage derating.
c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A.
Document Number: 72396
S-31921鈥擱ev. A, 15-Sep-03
www.vishay.com
1

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