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SUD50N04-07L Datasheet

  • SUD50N04-07L

  • N-Channel 40-V (D-S), 175 Degree Celcious MOSFET

  • 5頁(yè)

  • VISHAY   VISHAY

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SUD50N04-07L
New Product
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
FEATURES
I
D
(A)
c
65
54
r
DS(on)
(W)
0.0074 @ V
GS
= 10 V
0.011 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFETS
D
175_C Junction Temperature
D
Low Threshold
APPLICATIONS
D
Motor Control
D
Automotive
- 12-V Boardnet
D
TO-252
G
Drain Connected to Tab
G
D
S
S
N-Channel MOSFET
Top View
Ordering Information: SUD50N04-07L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
"20
65
c
46
c
100
40
80
65
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
J
ti t A bi t
Junction-to-Case
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
1.9
Maximum
22
50
2.3
Unit
_C/W
C/W
Notes:
a. Duty cycle
v
1%.
b. Surface mounted on 1鈥?FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72344
S-32079鈥擱ev. B, 13-Oct-03
www.vishay.com
1

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