SUD50N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
b
84
b
59b
r
DS(on)
(W)
0.0065 @ V
GS
= 10 V
0.0095 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
Optimized for Low-Side Synchronous
Rectifier Operation
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N03-06P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
T
C
= 25_C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 100_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
30
"20
84
b
59
b
100
25
88
8.3
a
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
Document Number: 71844
S-31268鈥擱ev. B, 16-Jun-03
www.vishay.com
t
v
10 sec
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
C/W
1