SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
24
C
FEATURES
I
D
(A)
d
80
64
r
DS(on)
(W)
0.006 @ V
GS
= 10 V
0.0095 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized for High Efficiency
APPLICATIONS
D
Synchronous Buck DC/DC Conversion
- Desktop
- Server
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N024-06P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Pulse Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
T
A
= 25_C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
P
D
T
J
, T
stg
L = 0.1 mH
T
C
= 25_C
T
C
= 100_C
I
D
I
DM
I
S
I
AS
E
AS
Symbol
V
DS(pulse)
V
DS
V
GS
Limit
24
C
22
"20
80
d
56
d
100
26
45
101
6.8
a
65
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
t
v
10 sec
Steady State
R
thJA
R
thJC
Symbol
Typical
18
40
1.9
Maximum
22
50
2.3
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
c. Pulse condition: T
A
= 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72289
S-31398鈥擱ev. A, 30-Jun-03
www.vishay.com
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