SUD45P03-10
Vishay Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
鈥?0
r
DS(on)
(W)
0.010 @ V
GS
= 鈥?0 V
0.018 @ V
GS
= 鈥?.5 V
I
D
(A)
a
鈥?5
鈥?2
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD45P03-10
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
鈥?0
"20
鈥?5
鈥?
鈥?00
鈥?5
70
4
b
鈥?5 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
Symbol
R
thJA
R
thJC
Typical
Maximum
30
1.8
Unit
_C/W
_
Notes
a. Calculated Rating for T
A
= 25
_
C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical
Characteristics).
b. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70766
S-02596鈥擱ev. D, 21-Nov-00
www.vishay.com
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