SUD35N05-26L
New Product
Vishay Siliconix
N-Channel 55-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
55
FEATURES
I
D
(A)
a
35
30
r
DS(on)
(W)
0.020 @ V
GS
= 10 V
0.026 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFETS
D
175_C Rated Maximum Junction Temperature
D
Low Input Capacitance
APPLICATIONS
D
Automotive Fuel Injection Systems
D
Automotive Wipers
D
Automotive Door Modules
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD35N05-26L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
T
C
= 25_C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 100_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
55
"20
35
25
80
35
50
c
7.5
b
鈥?5 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Junction-to-Ambient
b
Junction-to-Case
Junction-to-Lead
Notes
a. Package Limited.
b. Surface Mounted on 1鈥?x1鈥?FR4 Board, t
v
10 sec.
c. See SOA curve for voltage derating.
Document Number: 71443
S-03485鈥擱ev. A,16-Apr-01
www.vishay.com
Steady State
R
thJA
R
thJC
R
thJL
Symbol
Typical
17
50
2.5
5.0
Maximum
20
60
3.0
6.0
Unit
_C/W
_
1
1
2
3
4
