SUD19N20-90
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
200
FEATURES
I
D
(A)
19
17.5
r
DS(on)
(W)
0.090 @ V
GS
= 10 V
0.105 @ V
GS
= 6 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized
APPLICATIONS
D
Primary Side Switch
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD19N20-90
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 125_C
I
D
I
DM
I
S
I
AR
E
AR
Symbol
V
DS
V
GS
Limit
200
"20
19
11
40
19
19
18
100
b
3
a
鈥?5 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Junction-to-Ambient
a
Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1鈥?x1鈥?FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71767
S-05233鈥擱ev. A, 17-Dec-01
www.vishay.com
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
C/W
1