SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
75
r
DS(on)
(W)
0.010
I
D
(A)
75
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75N08-10
D S
S
N-Channel MOSFET
Top View
SUB75N08-10
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"20
75
a
55
Unit
V
A
240
60
280
187
c
W
3.7
鈥?5 to 175
_C
mJ
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Junction to Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 70263
S-57253鈥擱ev. B, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
hJA
R
thJC
Symbol
Limit
40
62.5
0.8
Unit
_C/W
2-1