SUP/SUB75N03-04
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.004
I
D
(A)
75
a
TO-220AB
TO-263
D
G
DRAIN connected to TAB
DRAIN connected to TAB
G
D S
G D S
Top View
SUP75N03-04
Top View
SUB75N03-04
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Repetitive Avalanche
Energy
b
L = 0.1 mH
L = 0.05 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
GS
I
D
I
DM
I
S
I
AR
E
AS
E
AR
P
D
T
J
, T
stg
TO-220AB
T
L
Limit
"20
75
a
75
a
250
75
75
280
140
187
c
3.7
鈥?5 to 175
300
Unit
V
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Lead Temperature
(
1
/
16
鈥?from case for 10 sec.)
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70745
S-04137鈥擱ev. E, 18-Jun-01
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
C/W
2-1
1
2
3
4
