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STW8NC80Z Datasheet

  • STW8NC80Z

  • N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerME...

  • 266.00KB

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 800V - 1.3
鈩?/div>
- 6.7A TO-247
Zener-Protected PowerMESH鈩II MOSFET
TYPE
STW8NC80Z
n
n
n
n
n
STW8NC80Z
V
DSS
800 V
R
DS(on)
< 1.5
鈩?/div>
I
D
6.7 A
TYPICAL R
DS
(on) = 1.3
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
TO-247
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
n
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n
WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
I
GS
V
ESD(G-S)
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15K鈩?
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
800
800
鹵25
6.7
4.2
27
160
1.28
鹵50
3
3
鈥?5 to 150
150
Unit
V
V
V
A
A
A
W
W/擄C
mA
KV
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
(1)I
SD
鈮?.7A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
December 2001
1/8

STW8NC80Z 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 800 V

  • +/- 25 V

  • 6.7 A

  • 1.5 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • Tube

  • 13 ns

  • - 65 C

  • 160 W

  • 12 ns

  • 30

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