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STW80NF55-06 Datasheet

  • STW80NF55-06

  • N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET⑩ II POWER MO...

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW80NF55-06
N-CHANNEL 55V - 0.005鈩?- 80A TO-247
STripFET鈩?II POWER MOSFET
PRELIMINARY DATA
TYPE
STW80NF55-06
s
s
s
V
DSS
55 V
R
DS(on)
< 0.0065
鈩?/div>
I
D
80 A
TYPICAL R
DS
(on) = 0.005鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
3
2
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s
DC-AC & DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(*)
I
D
I
DM
(
q
)
P
TOT
E
AS
(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
55
55
鹵20
80
80
320
300
2
1
鈥?55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
J
擄C
(
q
) Pulse width limited by safe operating area
(1) Starting T
j
= 25擄C, I
D
= 40A, V
DD
= 40V
(*) Current Limited by wire bonding
October 2001
1/6

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