鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩?鈥?strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
dv/dt
T
stg
T
j
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
Value
60
60
鹵
20
80
57
320
200
1.33
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
80 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/
o
C
V/ ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
July 1998
1/8
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