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STW6NB90 Datasheet

  • STW6NB90

  • N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET

  • 5頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STW6NB90
N - CHANNEL 900V - 1.7鈩?- 6.3A - TO-247
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STW6NB90
s
s
s
s
s
V
DSS
900 V
R
DS(on)
<2
鈩?/div>
I
D
6.3 A
TYPICAL R
DS(on)
= 1.7
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s
HIGH CURRENT, HIGH SPEED SWITCHING
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
900
900
鹵
30
6.3
4
25
160
1.28
4
-65 to 150
150
(
1
) I
SD
鈮?/div>
6A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
1/5
(鈥? Pulse width limited by safe operating area
February 1999

STW6NB90 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 900 V

  • +/- 30 V

  • 6.3 A

  • 2 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • Tube

  • 15 ns

  • - 65 C

  • 160 W

  • 10 ns

  • 30

STW6NB90相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST PO...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST PO...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOS...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOS...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRON...
  • 英文版
    MOSFET N-CH 650V TO-247
  • 英文版
    MOSFET N-CH 800V 46A
  • 英文版
    MOSFET N-CH 650V 60A

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