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STW60NE10 Datasheet

  • STW60NE10

  • N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOS...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW60NE10
N - CHANNEL 100V - 0.016鈩?- 60A TO-247
STripFET鈩?POWER MOSFET
TYPE
STW 60NE10
s
s
s
s
V
DSS
100 V
R
DS(on)
<0.022
鈩?/div>
I
D
60 A
TYPICAL R
DS(on)
= 0.016
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
1
2
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size
鈩?/div>
鈥?strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
dv/dt (
1
) Peak Diode Recovery voltage slope
T
s tg
T
j
June 1999
Storage Temperature
Max. Operating Junction Temperature
o
Value
100
100
20
60
42
240
180
1.2
9
-65 to 175
175
(
1
) I
SD
鈮?0
A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area

STW60NE10 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 60A

  • 22 毫歐 @ 30A,10V

  • 4V @ 250µA

  • 185nC @ 10V

  • 5300pF @ 25V

  • 180W

  • 通孔

  • TO-247-3

  • TO-247-3

  • 管件

  • 497-2643-5

STW60NE10相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST PO...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST PO...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOS...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOS...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerM...
    STMICROELECTRON...
  • 英文版
    MOSFET N-CH 650V TO-247
  • 英文版
    MOSFET N-CH 800V 46A
  • 英文版
    MOSFET N-CH 650V 60A

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