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STW5NA100 Datasheet

  • STW5NA100

  • N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW5NA100
STH5NA100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
STW5NA100
STH5NA100FI
s
s
s
s
s
s
V
DSS
1000 V
1000 V
R
DS(on)
< 3.5
鈩?/div>
< 3.5
鈩?/div>
I
D
4.6 A
2.9 A
TYPICAL R
DS(on)
= 2.9
鈩?/div>
鹵
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
GATE CHARGE MINIMISED
REDUCED THRESHOLD VOLTAGE SPREAD
TO-247
3
2
1
3
2
1
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STW5NA100
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Unit
STH5NA100FI
V
V
V
2.9
1.8
18.4
60
0.48
4000
A
A
A
W
W/
o
C
V
o
o
1000
1000
鹵
30
4.6
2.9
18.4
150
1.2
錚?/div>
-65 to 150
150
C
C
1/6
(鈥? Pulse width limited by safe operating area
October 1997

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