鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
鹵
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
DESCRIPTION
Using the latest high voltage technology,
STMicroelectronics has designed an advanced
family of power Mosfets with outstanding
performances. The new patent pending strip
layout coupled with the Company鈥檚 proprietary
edge termination structure, gives the lowest
R
DS
(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
鈩?/div>
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Storage Temperature
Max. O perating Junction Temperature
o
Value
200
200
鹵
30
50
32
200
280
2.24
4
-65 to 150
150
(
1
) I
SD
鈮?/div>
50 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area
October 1999
next
STW50NB20 產(chǎn)品屬性
30
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerMESH™
MOSFET N 通道,金屬氧化物
標(biāo)準(zhǔn)型
200V
50A
55 毫歐 @ 25A,10V
5V @ 250µA
115nC @ 10V
3400pF @ 25V
280W
通孔
TO-247-3
TO-247-3
管件
497-2670-5
STW50NB20相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
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