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STW40NS15 Datasheet

  • STW40NS15

  • N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY⑩ MOSFET

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW40NS15
N-CHANNEL 150V - 0.042鈩?- 40A TO-247
MESH OVERLAY鈩?MOSFET
PRELIMINARY DATA
TYPE
STW40NS15
s
s
s
s
V
DSS
150 V
R
DS(on)
<0.052鈩?/div>
I
D
40A
TYPICAL R
DS
(on) = 0.042鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
DESCRIPTION
This powermos MOSFET is designed using the
company鈥檚 consolidated strip layout-based MESH
OVERLAY
鈩?/div>
process. This technology matches
and improves the performances compared with
standard parts from various sources.
TO-247
INTERNAL
SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
PRIMARYSWITCH IN ISOLATED DC-DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM (1)
P
TOT
dv/dt
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
150
150
鹵20
40
25
160
180
0.933
9
鈥?5 to 175
175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
October 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/6

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