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STW33N20 Datasheet

  • STW33N20

  • N - CHANNEL ENHANCEMENT MODE POWER MOSFET

  • 117.96KB

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW33N20
N - CHANNEL ENHANCEMENT MODE
POWER MOSFET
TYPE
ST W33N20
s
s
s
s
s
s
s
s
V
DSS
200 V
R
DS(on)
< 0.085
鈩?/div>
I
D
33 A
TYPICAL R
DS(on)
= 0.073
鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
150
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
TO-247
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC CONVERTERS & DC-AC INVERTERS
s
TELECOMMUNICATION POWER SUPPLIES
s
INDUSTRIAL MOTOR DRIVES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
T
stg
T
j
St orage Temperature
Max. Operating Junction Temperature
o
Value
200
200
鹵
20
33
20
132
180
1.44
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/ C
o
o
o
C
C
(鈥? Pulse width limited by safe operating area
October 1997
1/9

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