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STW240NF55 Datasheet

  • STW240NF55

  • N-CHANNEL 55V - 0.0027 з - 120A TO-247 STripFET⑩ II POWER ...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW240NF55
N-CHANNEL 55V - 0.0027
鈩?/div>
- 120A TO-247
STripFET鈩?II POWER MOSFET
TYPE
STW240NF55
鈻?/div>
鈻?/div>
鈻?/div>
V
DSS
55V
R
DS(on)
<0.0035
鈩?/div>
I
D
(1)
120A
TYPICAL R
DS
(on) = 0.0027
鈩?/div>
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
1
TO-247
2
3
APPLICATIONS
鈻?/div>
HIGH CURRENT, HIGH SWITCHING SPEED
鈻?/div>
OR-ING FUNCTION
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STW240NF55
MARKING
W240NF55
PACKAGE
TO-247
PACKAGING
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(1
)
I
D
(1
)
I
DM
(
鈥?
P
tot
dv/dt
(2)
E
AS(3)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
鈩?/div>
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
55
55
鹵 20
120
120
480
500
3.33
5
3.5
-55 to 175
(2) I
SD
鈮?/div>
120A, di/dt
鈮?/div>
600A/碌s, V
DD
鈮?/div>
48V, T
j
鈮?/div>
T
JMAX.
(3) Starting T
j
= 25
o
C, I
D
= 60A, V
DD
= 30V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
J
擄C
(
鈥?
Pulse width limited by safe operating area.
(1)Current Limited by Package
May 2004
1/8

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