(on) = 0.004鈩?/div>
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
1
TO-247
2
3
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
AUTOMOTIVE 42V BATTERY SYSTEM
s
OR-ING FUNCTION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(**)
I
D
(**)
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
75
75
鹵 20
120
120
480
500
3.33
10
2500
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
鈥?
Pulse width limited by safe operating area.
(**) Current Limited by Package
May 2003
(1) I
SD
鈮?20A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 30V
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