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STW18NB40 Datasheet

  • STW18NB40

  • N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH...

  • 144.60KB

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 400V - 0.19
鈩?/div>
- 18.4 A TO-247/ISOWATT218
PowerMesh鈩?MOSFET
TYPE
STW18NB40
STH18NB40FI
s
s
s
s
s
STW18NB40
STH18NB40FI
PRELIMINARY DATA
V
DSS
400 V
400 V
R
DS(on)
< 0.26
鈩?/div>
< 0.26
鈩?/div>
I
D
18.4 A
12.4 A
TYPICAL R
DS
(on) = 0.19
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
TO-247
3
2
1
3
2
1
ISOWATT218
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company鈥檚 proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
STW18NB40
400
400
鹵30
18.4
11.6
73.6
190
1.52
4.5
-
鈥?5 to 150
150
(1)I
SD
<18.4A, di/dt<200A/碌, V
DD
<V
(BR)DSS
,TJ<T
JMAX
Unit
V
V
V
12.4
7.8
73.6
80
0.64
4.5
2000
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
STH18NB40FI
(鈥?Pulse width limited by safe operating area
June 2002
1/7

STW18NB40 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • N-Channel

  • 400 V

  • +/- 30 V

  • 18.4 A

  • 0.26 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • Tube

  • 15 ns

  • - 65 C

  • 190 W

  • 14 ns

  • 30

STW18NB40相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D)...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) |...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
    STMICROELECTRONICS
  • 英文版
    MOSFET N-CH 800V 11A TO-247
  • 英文版
    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
    STMICROELECTRONICS

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