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STW16NB60 Datasheet

  • STW16NB60

  • N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh⑩ MOSFET

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW16NB60
N-CHANNEL 600V - 0.3鈩?- 16A TO-247
PowerMesh鈩?MOSFET
TYPE
STW16NB60
s
s
s
s
s
V
DSS
600V
R
DS(on)
< 0.35
鈩?/div>
I
D
16 A
TYPICAL R
DS
(on) = 0.3鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
1
3
2
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company鈥檚 proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
600
600
鹵30
16
10
64
220
1.76
4
鈥?5 to 150
150
(1)I
SD
鈮?6A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
April 2003
1/8

STW16NB60 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 600 V

  • +/- 30 V

  • 16 A

  • 0.35 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • Tube

  • 12 ns

  • - 65 C

  • 220 W

  • 16 ns

  • 30

STW16NB60相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D)...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) |...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
    STMICROELECTRONICS
  • 英文版
    MOSFET N-CH 800V 11A TO-247
  • 英文版
    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
    STMICROELECTRONICS

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