鈩?/div>
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
3
1
2
TO-247
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D
2
PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
I
D
(**)
Drain Current (continuous) at T
C
= 100擄C
I
D
I
DM
(鈥?
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25擄C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(鈥?
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
55
55
鹵 20
120
106
480
300
2.0
8
850
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(1) I
SD
鈮?20A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 30V
October 2002
1/14
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