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STW14NC50 Datasheet

  • STW14NC50

  • N-CHANNEL 500V - 0.31W - 14A TO-247 PowerMesh II MOSFET

  • 268.93KB

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW14NC50
N-CHANNEL 500V - 0.31鈩?- 14A TO-247
PowerMesh鈩I MOSFET
TYPE
STW14NC50
s
s
s
s
s
V
DSS
500V
R
DS(on)
< 0.38鈩?/div>
I
D
14 A
TYPICAL R
DS
(on) = 0.31鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
1
3
2
DESCRIPTION
The PowerMESH
鈩?/div>
II is the evolution of the first
generation of MESH OVERLAY
鈩?
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
500
500
鹵30
14
8.7
56
190
1.5
3.5
鈥?5 to 150
150
(1)I
SD
鈮?4A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
May 2001
1/8

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