Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
V
ISO
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
o
o
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW 13NB60 STH13NB60FP
600
600
鹵
30
13
8.2
52
190
1.52
4
錚?/div>
-65 to 150
150
(
1
) I
SD
鈮?/div>
13 A
,
di/dt
鈮?/div>
200
螒/碌
s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
8.6
5.4
52
80
0.64
4
2000
A
A
A
W
W/ C
V/ns
V
o
o
o
C
C
(
鈥?
Pulse width limited by safe operating area
January 2000
1/9
STW13NB60 產(chǎn)品屬性
30
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerMESH™
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
600V
13A
540 毫歐 @ 6.5A，10V
5V @ 250µA
82nC @ 10V
2600pF @ 25V
190W
通孔
TO-247-3
TO-247-3
管件
497-2772-5
STW13NB60相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) |...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D)...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) |...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) |...
-
英文版
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
-
英文版
N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
STMICROELECTRON...
-
英文版
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
-
英文版
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
STMICROELECTRON...
-
英文版
N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
-
英文版
N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
STMICROELECTRON...
-
英文版
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
-
英文版
MOSFET N-CH 800V 11A TO-247
-
英文版
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
STMICROELECTRON...
-
英文版
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
STMICROELECTRONICS
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