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STW12NA60 Datasheet

  • STW12NA60

  • N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

  • 244.95KB

  • 11頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STH12NA60/FI
STW12NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STH12NA60
STH12NA60FI
STW12NA60
s
s
s
s
s
s
s
V
DSS
600 V
600 V
600 V
R
DS( on)
< 0.6
鈩?/div>
< 0.6
鈩?/div>
< 0.6
鈩?/div>
I
D
12 A
7A
12 A
TO-247
TYPICAL R
DS(on)
= 0.44
鈩?/div>
鹵
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
TO-218
1
3
2
1
3
3
2
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
DS(on)
and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
2
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
Value
STH/STW12NA60
STH12NA60FI
Unit
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(鈥?
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
600
600
鹵
30
12
7.6
48
190
1.52
錚?/div>
-65 to 150
150
7
4.4
48
80
0.64
4000
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
(鈥? Pulse width limited by safe operating area
November 1996
1/11

STW12NA60 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 600 V

  • +/- 30 V

  • 12 A

  • 0.6 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • 20 ns

  • - 65 C

  • 190 W

  • 35 ns

  • 30

STW12NA60相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D)...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) |...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
    STMICROELECTRONICS
  • 英文版
    MOSFET N-CH 800V 11A TO-247
  • 英文版
    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
    STMICROELECTRONICS

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