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STW12NA50 Datasheet

  • STW12NA50

  • N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW12NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW12NA50
s
s
s
s
s
s
s
V
DSS
500 V
R
DS( on)
< 0.6
鈩?/div>
I
D
11.6 A
TYPICAL R
DS(on)
= 0.5
鈩?/div>
鹵
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
TO-247
3
2
1
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
DS(on)
and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(鈥?
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
500
500
鹵
30
11.6
7.3
46.4
170
1.36
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
December 1995
1/9

STW12NA50 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 500 V

  • +/- 30 V

  • 11.6 A

  • 0.6 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • 12 ns

  • - 65 C

  • 170 W

  • 32 ns

  • 30

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