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STW10NB60 Datasheet

  • STW10NB60

  • N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STW10NB60
N - CHANNEL 600V - 0.69鈩?- 10A - TO-247
PowerMESH鈩?MOSFET
TYPE
ST W10NB60
s
s
s
s
s
V
DSS
600 V
R
DS(on)
< 0.8
鈩?/div>
I
D
10 A
TYPICAL R
DS(on)
= 0.69
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s
HIGH CURRENT, HIGH SPEED SWITCHING
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
600
600
鹵
30
10
6.2
40
160
1.28
4.5
-65 to 150
150
(
1
) I
SD
鈮?0A,
di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area
October 1998

STW10NB60 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 600 V

  • +/- 30 V

  • 10 A

  • 0.8 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-247

  • Tube

  • 10 ns

  • 6.5 S

  • - 65 C

  • 160 W

  • 11 ns

  • 30

STW10NB60相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D)...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) |...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) |...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
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  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
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  • 英文版
    N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...
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  • 英文版
    N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET
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  • 英文版
    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh...
    STMICROELECTRONICS
  • 英文版
    MOSFET N-CH 800V 11A TO-247
  • 英文版
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  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
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