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STU7NB90I Datasheet

  • STU7NB90I

  • N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ ...

  • 405.84KB

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 900V - 1.1
鈩?/div>
- 7.3 A Max220/Max220I
PowerMesh鈩?MOSFET
TYPE
STU7NB90
STU7NB90I
s
s
s
s
s
s
STU7NB90
STU7NB90I
V
DSS
900 V
900 V
R
DS(on)
< 1.45
鈩?/div>
< 1.45
鈩?/div>
I
D
7.3 A
7.3 A
TYPICAL R
DS
(on) = 1.1
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
1
2
3
Max220
Max220I
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company鈥檚 proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
STU7NB90
900
900
鹵30
7.3
4.6
29.2
170
1.36
4
-
鈥?5 to 150
150
2500
7.3 (*)
4.6 (*)
29.2 (*)
60
0.47
STU7NB90I
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
(鈥?Pulse width limited by safe operating area
(1) I
SD
鈮?.3
A, di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
(*) Current Limited by Package
May 2001
1/9

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