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STU7NB100 Datasheet

  • STU7NB100

  • N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET

  • 5頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STU7NB100
N - CHANNEL 1000V - 1.2鈩?- 7.3A - Max220
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STU7NB100
s
s
s
s
s
s
s
V
DSS
1000 V
R
DS(on)
< 1.5
鈩?/div>
I
D
7.3 A
TYPICAL R
DS(on)
= 1.2
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
鹵
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
Max220
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company鈥檚 proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
T
stg
T
j
March 1999
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
INTERNAL SCHEMATIC DIAGRAM
Value
1000
1000
鹵
30
7.3
4.7
29
160
1.28
4
-65 to 150
150
(
1
) I
SD
鈮?.3 螒,
di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
1/5
(鈥? Pulse width limited by safe operating area

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