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STU7NA80 Datasheet

  • STU7NA80

  • N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STU7NA80
N - CHANNEL 800V - 1.3鈩?- 6.5A - Max220
FAST POWER MOSFET
PRELIMINARY DATA
TYPE
STU7NA80
V
DSS
800 V
R
DS(on)
< 1.5
鈩?/div>
I
D
6.5 A
s
s
s
s
s
s
s
TYPICAL R
DS(on)
= 1.3
鈩?/div>
鹵
30V GATE TO SOURCE VOLTAGE RATING
REPETITIVE AVALANCHE TESTED DATA
AT 100
o
C
LOW INTRINSIC CAPACITANCE
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
Max220
TM
DESCRIPTION
The Max220
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
stg
T
j
June 1998
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
800
800
鹵
30
6.5
4.3
26
145
1.16
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
1/5
(鈥? Pulse width limited by safe operating area

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