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STU36NB20 Datasheet

  • STU36NB20

  • N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

  • 6頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STU36NB20
N-CHANNEL ENHANCEMENT MODE
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STU36NB20
s
s
s
s
s
s
V
DSS
200 V
R
DS(on)
< 0.065
鈩?/div>
I
D
36 A
TYPICAL R
DS(on)
= 0.052
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
鹵
30V GATE TO SOURCE VOLTAGE RATING
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
dv/dt(
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
Value
200
200
鹵
30
36
23
144
160
1.28
5.5
-65 to 150
150
(
1
) I
SD
鈮?6A,
di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/ C
V/ ns
o
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
January 1998
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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