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STU16NB50 Datasheet

  • STU16NB50

  • N-CHANNEL 500V - 0.28ohm - 15.6A-Max220 PowerMESH MOSFET

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STU16NB50
N-CHANNEL 500V - 0.28鈩?- 15.6A-Max220
PowerMESH鈩?MOSFET
TYPE
ST U16NB50
s
s
s
s
s
s
V
DSS
500 V
R
DS(on)
< 0.33
鈩?/div>
I
D
15.6 A
TYPICAL R
DS(on)
= 0.28
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
鹵
30V GATE TO SOURCE VOLTAGE RATING
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY
鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
鈩?/div>
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
500
500
鹵
30
15.6
9.8
62
160
1.28
4.5
-65 to 150
150
(
1
) I
SD
鈮?6A,
di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
September 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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