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STU10NB80 Datasheet

  • STU10NB80

  • N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STU10NB80
N - CHANNEL 800V - 0.65鈩?- 10A - Max220
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STU10NB80
s
s
s
s
s
V
DSS
800 V
R
DS(on)
< 0.8
鈩?/div>
I
D
10 A
TYPICAL R
DS(on)
= 0.65
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s
HIGH CURRENT, HIGH SPEED SWITCHING
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt (
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
o
Value
800
800
鹵
30
10
6.3
40
160
1.28
4
-65 to 150
150
(
1
) I
SD
鈮?0 螒, 鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
April 1999
1/5

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